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T1G6001528-Q3 Datasheet(PDF) 7 Page - TriQuint Semiconductor

Part # T1G6001528-Q3
Description  DC 6 GHz 18 W GaN RF Power Transistor
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

T1G6001528-Q3 Datasheet(HTML) 7 Page - TriQuint Semiconductor

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T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Preliminary Data Sheet: Rev - A 06/14/2011
-
7 of 15-
Disclaimer: Subject to change without notice
© 2011 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance (cont.)
Performance is measured at DUT reference plane
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0
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Pout [dBm]
Gain, DEff., and PAE vs. Pout
Freq.=1GHz, V
DS
=28V, I
DQ
=50mA; CW
Gain
DEff.
PAE
Z
S
= 6.95 + j12.03
Ω
Z
L
= 15.09 - j1.19
Ω
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0
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Pout [dBm]
Gain, DEff., and PAE vs. Pout
Freq.=2GHz, V
DS
=28V, I
DQ
=50mA; CW
Gain
DEff.
PAE
Z
S
= 3.17 + j2.69
Ω
Z
L
= 13.00 - j0.51
Ω
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Pout [dBm]
Gain, DEff., and PAE vs. Pout
Freq.=3GHz, V
DS
=28V, I
DQ
=50mA; CW
Gain
DEff.
PAE
Z
S
= 2.85 - j1.71
Ω
Z
L
= 8.34 - j5.73
Ω
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Pout [dBm]
Gain, DEff., and PAE vs. Pout
Freq.=4GHz, V
DS
=28V, I
DQ
=50mA; CW
Gain
DEff.
PAE
Z
S
= 3.38 - j9.21
Ω
Z
L
= 9.35 - j7.76
Ω
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Pout [dBm]
Gain, DEff., and PAE vs. Pout
Freq.=5GHz, V
DS
=28V, I
DQ
=50mA; CW
Gain
DEff.
PAE
Z
S
= 5.18 - j16.49
Ω
Z
L
= 10.23 - j10.41
Ω
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Pout [dBm]
Gain, DEff., and PAE vs. Pout
Freq.=6GHz, V
DS
=28V, I
DQ
=50mA; CW
Gain
DEff.
PAE
Z
S
= 4.24 - j16.89
Ω
Z
L
= 20.68 - j18.80
Ω


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