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T1G4020036-FS Datasheet(PDF) 16 Page - TriQuint Semiconductor

Part No. T1G4020036-FS
Description  2 x 120W Peak Power, 2 x24W Average Power, 36V DC 3.5 GHz, GaN RF Power Transistor
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Maker  TRIQUINT [TriQuint Semiconductor]
Homepage  http://www.triquint.com
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T1G4020036-FS Datasheet(HTML) 16 Page - TriQuint Semiconductor

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T1G4020036-FS
2 x 120W Peak Power, 2 x24W Average Power,
36V DC – 3.5 GHz, GaN RF Power Transistor
Datasheet: Rev B 11-24-14
- 16 of 21 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
Application Circuit
Bias-down Procedure
Turn off RF signal
Turn off VD and wait 1 second to allow drain capacitor
dissipation
Turn off VG
Bias-up Procedure
Set gate voltage (VG) to -5.0V
Set drain voltage (VD) to 36 V
Slowly increase VG until quiescent ID is 520 mA.
Apply RF signal


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