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T1G4020036-FL Datasheet(PDF) 5 Page - TriQuint Semiconductor |
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T1G4020036-FL Datasheet(HTML) 5 Page - TriQuint Semiconductor |
5 / 21 page T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Datasheet: Rev B 11-24-14 - 5 of 21 - Disclaimer: Subject to change without notice © 2014 TriQuint www.triquint.com Maximum Channel Temperature TBASE = 85°C, PD = 230 W 100.0 120.0 140.0 160.0 180.0 200.0 220.0 240.0 260.0 280.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse Width (sec) Maximum Channel Temperature Tbase = 85oC, Pdiss = 230 W 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle |
Similar Part No. - T1G4020036-FL_15 |
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Similar Description - T1G4020036-FL_15 |
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