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T1G4003532-FL-EVB1 Datasheet(PDF) 7 Page - TriQuint Semiconductor |
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T1G4003532-FL-EVB1 Datasheet(HTML) 7 Page - TriQuint Semiconductor |
7 / 13 page T1G4003532-FL 35W, 32V, DC – 3.5 GHz, GaN RF Power Transistor Data Sheet: Rev A 10/18/2012 - 7 of 13 - Disclaimer: Subject to change without notice © 2012 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network ® Evaluation Board Performance: 2.7 to 3.5 GHz Output Power and Gain at 3 dB Compression VDS = 32 V, IDQ = 150 mA; Pulse: 100 µsec, 20% Drain Efficiency and Power Added Efficiency at 3 dB Compression VDS = 32 V, IDQ = 150 mA; Pulse: 100 µsec, 20% 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 20.00 15.00 20.00 25.00 30.00 35.00 40.00 45.00 50.00 55.00 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 Frequency (GHz) Power (W) Gain (dB) 35 40 45 50 55 60 65 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 Frequency (GHz) Drain Eff. (%) PAE (%) |
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