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RJP60F0DPM Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJP60F0DPM Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page RJP60F0DPM Preliminary R07DS0585EJ0100 Rev.1.00 Page 2 of 6 Nov 25, 2011 Electrical Characteristics (Tj = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current ICES — — 100 A VCE = 600V, VGE = 0 Gate to emitter leak current IGES — — ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 4 — 8 V VCE = 10V, IC = 1 mA — 1.4 1.82 V IC = 25 A, VGE = 15V Note3 Collector to emitter saturation voltage VCE(sat) — 1.7 — V IC = 50 A, VGE = 15V Note3 Input capacitance Cies 1550 pF Output capacitance Coes 82 pF Reverse transfer capacitance Cres 26 pF VCE = 25 V VGE = 0 V f = 1 MHz td(on) 46 ns tr 92 ns td(off) 70 ns Switching time tf 90 ns IC = 30 A, VCE = 400 V, VGE = 15 V Rg = 5 Note3 Inductive load Notes: 3. Pulse test |
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