SSE4N60_15 datasheet(2/6 Pages) SECOS

Part #	SSE4N60

Description	N-Channel Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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2 / 6 page

Elektronische Bauelemente

SSE4N60

4.1A, 600 V, RDS(ON) 2.5 Ω

Ω

N-Channel Enhancement Mode Power MOSFET

02-May-2013 Rev. A

Page 2 of 6

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

VGS(th)

2

-

4

V

VDS=VGS, ID=250µA

Drain-Source On-Resistance

RDS(ON)

-

2.0

2.5

VGS=10V, ID=2.05A

Drain-Sounce Breakdown Voltage

BVDSS

600

-

V

VGS=0, ID=250µA

Zero Gate Voltage Drain Current

IDSS

-

10

µA

VDS=600V, VGS=0

Gate-Body Leakage Current, Forward

IGSSF

-

100

nA

VGS =30V, VDS=0

Gate-Body Leakage Current, Reverse

IGSSR

-

-100

nA

VGS= -30V, VDS=0

Dynamic

Total Gate Charge

1.2

Qg

-

19

-

Gate-Source Charge

1.2

Qgs

-

2.9

-

Gate-Drain Charge

1.2

Qgd

-

8.2

-

nC

VDS=480V,ID =4.1A,

VGS=10V

Turn-on Delay Time

1.2

Td(on)

-

25

-

Rise Time

1.2

Tr

-

54

-

Turn-off Delay Time

1.2

Td(off)

-

120

-

Fall Time

1.2

Tf

-

34

-

nS

VDD=300V,

ID=4.1A,

RG=25

Input Capacitance

Ciss

-

570

-

Output Capacitance

Coss

-

64

-

Reverse Transfer Capacitance

Crss

-

14

-

pF

VDS=25V,

VGS=0,

f=1.0MHz

Maximum Continuous Drain-Source

Diode Forward Current

IS

-

4.1

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

-

16.4

A

Drain-Source Diode Forward Voltage

VSD

-

1.4

V

VGS=0, IS=4A

Reverse Recovery Time

1

Trr

-

560

-

nS

Reverse Recovery Charge

1

Qrr

-

1.78

-

µC

VGS=0, IS=4.1A,

dIF / dt = 100A / µs

Notes:

1.

Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%.

2.

Basically not affected by working temperature.

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