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SSD9575 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSD9575
Description  P-Channel Enhancement Mode Power Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD9575 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Description
The SSD9575 provide the designer with the best combination of
Features
* Low On-Resistance
*
Simple Drive Requirement
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
fast switching, ruggerized device device design, low on-resistance
and cost -effectiveness.
TO-252
Elektronische Bauelemente
SSD9575
-15A, -60V,RDS(ON)90m
P-Channel Enhancement Mode Power Mos.FET
Ω
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.40
6.80
G
0.50
0.70
B
5.20
5.50
H
2.20
2.40
C
6.80
7.20
J
0.45
0.55
D
2.20
2.80
K
0
0.15
E
2.30 REF.
L
0.90
1.50
F
0.70
0.90
M
5.40
5.80
S
0.60
0.90
R
0.80
1.20
S
D
G
* Fast Switching
Absolute Maximum Ratings
Drain-Source Voltage
0.29
3.5
-45
-15
-9.5
36
-60
± 25
W/ C
C
Tj, Tstg
-55~+150
o
o
Thermal Resistance Junction-case
/W
C
Rthj-c
Total Power Dissipation
Parameter
Symbol
Ratings
Unit
A
V
V
A
A
ID@TC=
W
VDS
VGS
ID@TC=25
IDM
PD@TC=
100 C
o
1
C
o
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient
/W
C
Rthj-a
Max.
Max.
110
o
o
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current
h
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
such as DC/DC converters.
25 C
o
RoHS Compliant Product


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