IRG4PH20 datasheet(1/8 Pages) IRF

Part #	IRG4PH20

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A)

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Manufacturer	IRF [International Rectifier]

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VCES = 1200V

VCE(on) typ. = 3.17V

@VGE = 15V, IC = 5.0A

Absolute Maximum Ratings

Parameter

Max.

Units

VCES

Collector-to-Emitter Voltage

1200

V

IC @ TC = 25°C

Continuous Collector Current

11

IC @ TC = 100°C

Continuous Collector Current

5.0

A

ICM

Pulsed Collector Current

22

ILM

Clamped Inductive Load Current

22

tsc

Short Circuit Withstand Time

10

µs

VGE

Gate-to-Emitter Voltage

±20

V

EARV

Reverse Voltage Avalanche Energy

130

mJ

PD @ TC = 25°C

Maximum Power Dissipation

60

W

PD @ TC = 100°C

Maximum Power Dissipation

24

TJ

Operating Junction and

-55 to +150

TSTG

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4PH20K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD -91776

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

2.1

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

TO-247AC

E

C

G

n-channel

Features

Benefits

• High short circuit rating optimized for motor control,

tsc =10µs, VCC = 720V , TJ = 125°C,

VGE = 15V

• Combines low conduction losses with high

switching speed

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

• As a Freewheeling Diode we recommend our

HEXFREDTM ultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBT's offer highest power

density motor controls possible

www.irf.com

1

6/25/98

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