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IRG4BC30US Datasheet(PDF) 2 Page - International Rectifier |
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IRG4BC30US Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4BC30U-S 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 50 75 IC = 12A Qge Gate - Emitter Charge (turn-on) — 8.1 12 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 18 27 VGE = 15V td(on) Turn-On Delay Time — 17 — tr Rise Time — 9.6 — TJ = 25°C td(off) Turn-Off Delay Time — 78 120 IC = 12A, VCC = 480V tf Fall Time — 97 150 VGE = 15V, RG = 23W Eon Turn-On Switching Loss — 0.16 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.20 — mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss — 0.36 0.50 td(on) Turn-On Delay Time — 20 — TJ = 150°C, tr Rise Time — 13 — IC = 12A, VCC = 480V td(off) Turn-Off Delay Time — 180 — VGE = 15V, RG = 23W tf Fall Time — 140 — Energy losses include "tail" Ets Total Switching Loss — 0.73 — mJ See Fig. 13, 14 LE Internal Source Inductance — 7.5 — nH Measured 5mm from package Cies Input Capacitance — 1100 — VGE = 0V Coes Output Capacitance — 73 — pF VCC = 30V See Fig.7 Cres Reverse Transfer Capacitance — 14 — ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage — 0.63 — V/°C VGE = 0V, IC = 1.0mA — 1.95 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 2.52 — IC = 23A See Fig.2, 5 — 2.09 — IC = 12A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA D VGE(th)/DTJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 3.1 8.6 — S VCE = 100V, IC = 12A — — 250 VGE = 0V, VCE = 600V — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width £ 80µs; duty factor £ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23W , (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
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