IRG4BC30 datasheet(1/8 Pages) IRF

Part #	IRG4BC30

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

31

IC @ TC = 100°C

Continuous Collector Current

17

A

ICM

Pulsed Collector Current

Q

120

ILM

Clamped Inductive Load Current

R

120

VGE

Gate-to-Emitter Voltage

± 20

V

EARV

Reverse Voltage Avalanche Energy

S

10

mJ

PD @ TC = 25°C

Maximum Power Dissipation

100

PD @ TC = 100°C

Maximum Power Dissipation

42

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4BC30F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91450B

E

C

G

n-channel

Features

• Fast: optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• Industry standard TO-220AB package

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

Benefits

VCES = 600V

VCE(on) typ.

= 1.59V

@VGE = 15V, IC = 17A

4/17/2000

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.2

RθCS

Case-to-Sink, Flat, Greased Surface

0.5

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

80

Wt

Weight

2.0 (0.07)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

TO-220AB

www.irf.com

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