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IRG4BC20SD Datasheet(PDF) 5 Page - International Rectifier

Part No. IRG4BC20SD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC20SD Datasheet(HTML) 5 Page - International Rectifier

  IRG4BC20SD Datasheet HTML 1Page - International Rectifier IRG4BC20SD Datasheet HTML 2Page - International Rectifier IRG4BC20SD Datasheet HTML 3Page - International Rectifier IRG4BC20SD Datasheet HTML 4Page - International Rectifier IRG4BC20SD Datasheet HTML 5Page - International Rectifier IRG4BC20SD Datasheet HTML 6Page - International Rectifier IRG4BC20SD Datasheet HTML 7Page - International Rectifier IRG4BC20SD Datasheet HTML 8Page - International Rectifier IRG4BC20SD Datasheet HTML 9Page - International Rectifier Next Button
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IRG4BC20SD
www.irf.com
5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
J
°
R
=
V
= 15V
V
= 480V
G
GE
CC
I =
A
20
C
I =
A
10
C
I =
A
5
C
0
10
20
30
40
50
2.7
2.8
2.9
3.0
R
, Gate Resistance
G
V
= 480V
V
= 15V
T
= 25
C
I
= 10A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
5
10
15
20
25
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
V
= 400V
I
= 10A
CC
C
1
10
100
0
200
400
600
800
1000
V
, Collector-to-Emitter Voltage (V)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc
Cies
Coes
Cres
50
RG, Gate Resistance (Ω)


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