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IRG4BC20SD Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4BC20SD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC20SD Datasheet(HTML) 2 Page - International Rectifier

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IRG4BC20SD
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
27
40
IC = 10A
Qge
Gate - Emitter Charge (turn-on)
4.3
6.5
nC
VCC = 400V
See Fig. 8
Qgc
Gate - Collector Charge (turn-on)
10
15
VGE = 15V
td(on)
Turn-On Delay Time
62
TJ = 25°C
tr
Rise Time
32
ns
IC = 10A, VCC = 480V
td(off)
Turn-Off Delay Time
690 1040
VGE = 15V, RG = 50Ω
tf
Fall Time
480
730
Energy losses include "tail" and
Eon
Turn-On Switching Loss
0.32
diode reverse recovery.
Eoff
Turn-Off Switching Loss
2.58
mJ
See Fig. 9, 10, 11,18
Ets
Total Switching Loss
2.90
4.5
td(on)
Turn-On Delay Time
64
TJ = 150°C,
See Fig. 10,11, 18
tr
Rise Time
35
ns
IC = 10A, VCC = 480V
td(off)
Turn-Off Delay Time
980
VGE = 15V, RG = 50Ω
tf
Fall Time
800
Energy losses include "tail" and
Ets
Total Switching Loss
4.33
mJ
diode reverse recovery.
LE
Internal Emitter Inductance
7.5
nH
Measured 5mm from package
Cies
Input Capacitance
550
VGE = 0V
Coes
Output Capacitance
39
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
7.1
ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
37
55
ns
TJ = 25°C
See Fig.
—55
90
TJ = 125°C
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
3.5
5.0
A
TJ = 25°C
See Fig.
4.5
8.0
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
65
138
nC
TJ = 25°C
See Fig.
124
360
TJ = 125°C
16
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
240
A/µs
TJ = 25°C
See Fig.
During tb
210
TJ = 125°C
17
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ
600
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.75
V/°C
VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
1.40
1.6
IC = 10A
VGE = 15V
1.85
V
IC = 19A
See Fig. 2, 5
1.44
IC = 10A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
VGE(th)/TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
„
2.0
5.8
S
VCE = 100V, IC = 10A
ICES
Zero Gate Voltage Collector Current
250
µA
VGE = 0V, VCE = 600V
1700
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.4
1.7
V
IC = 8.0A
See Fig. 13
1.3
1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)


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