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IRG4BC20KDS Datasheet(PDF) 1 Page - International Rectifier

Part No. IRG4BC20KDS
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRG4BC20KDS Datasheet(HTML) 1 Page - International Rectifier

 
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Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
16
IC @ TC = 100°C
Continuous Collector Current
9.0
ICM
Pulsed Collector Current
Q
32
A
ILM
Clamped Inductive Load Current
R
32
IF @ TC = 100°C
Diode Continuous Forward Current
7.0
IFM
Diode Maximum Forward Current
32
tsc
Short Circuit Withstand Time
10
µs
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
60
PD @ TC = 100°C
Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw.
10 lbf•in (1.1 N•m)
IRG4BC20KD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Features
Features
Features
Features
E
G
n-ch an nel
C
VCES = 600V
VCE(on) typ. = 2.27V
@VGE = 15V, IC = 9.0A
Short Circuit Rated
UltraFast IGBT
4/24/2000
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE = 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D2Pak package
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible.
•HEXFREDTM diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
• For hints see design tip 97003.
PD -91598A
Absolute Maximum Ratings
W
2
D Pa k
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
–––
2.1
RθJC
Junction-to-Case - Diode
2.5
RθCS
Case-to-Sink, Flat, Greased Surface
0.5
–––
°C/W
RθJA
Junction-to-Ambient ( PCB Mounted,steady-state)
U
–––
40
Wt
Weight
1.44
–––
g
Thermal Resistance
www.irf.com
1


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