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IRG4BC20KDS Datasheet(PDF) 2 Page - International Rectifier

Part No. IRG4BC20KDS
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRG4BC20KDS Datasheet(HTML) 2 Page - International Rectifier

 
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IRG4BC20KD-S
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
34
51
IC = 9.0A
Qge
Gate - Emitter Charge (turn-on)
4.9
7.4
nC
VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
14
21
VGE = 15V
td(on)
Turn-On Delay Time
54
tr
Rise Time
34
TJ = 25°C
td(off)
Turn-Off Delay Time
180
270
IC = 9.0A, VCC = 480V
tf
Fall Time
72
110
VGE = 15V, RG = 50Ω
Eon
Turn-On Switching Loss
0.34
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
0.30
mJ
and diode reverse recovery
Ets
Total Switching Loss
0.64 0.96
See Fig. 9,10,14
tsc
Short Circuit Withstand Time
10
——
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
td(on)
Turn-On Delay Time
51
TJ = 150°C,
See Fig. 11,14
tr
Rise Time
37
IC = 9.0A, VCC = 480V
td(off)
Turn-Off Delay Time
220
VGE = 15V, RG = 50Ω
tf
Fall Time
160
Energy losses include "tail"
Ets
Total Switching Loss
0.85
mJ
and diode reverse recovery
LE
Internal Emitter Inductance
7.5
nH
Measured 5mm from package
Cies
Input Capacitance
450
VGE = 0V
Coes
Output Capacitance
61
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
14
—ƒ = 1.0MHz
trr
Diode Reverse Recovery Time
37
55
ns
TJ = 25°C
See Fig.
55
90
TJ = 125°C
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
3.5
5.0
A
TJ = 25°C
See Fig.
4.5
8.0
TJ = 125°C
15
VR = 200V
Qrr
Diode Reverse Recovery Charge
65
138
nC
TJ = 25°C
See Fig.
124
360
TJ = 125°C
16
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
240
A/µs
TJ = 25°C
See Fig.
During tb
210
TJ = 125°C
17
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
S
600
——
VVGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.49
V/°CVGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
2.27
2.8
IC = 9.0A
VGE = 15V
3.01
VIC = 16A
See Fig. 2, 5
2.43
IC = 9.0A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-10
mV/°CVCE = VGE, IC = 250µA
gfe
Forward Transconductance
T
2.9
4.3
SVCE = 100V, IC = 9.0A
ICES
Zero Gate Voltage Collector Current
——
250
µA
VGE = 0V, VCE = 600V
——
1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
1.4
1.7
V
IC = 8.0A
See Fig. 13
1.3
1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
——
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns


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