IRG4BC10SD-S datasheet(3/12 Pages) IRF

Part #	IRG4BC10SD-S

Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)

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Manufacturer	IRF [International Rectifier]

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IRG4BC10SD-S/L

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Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

1

10

100

0.5

1.0

1.5

2.0

2.5

3.0

V

, Collector-to-Emitter Voltage (V)

CE

V

= 15V

80µs PULSE WIDTH

GE

T = 25 C

J

°

T = 150 C

J

°

1

10

100

6

8

10

12

V

, Gate-to-Emitter Voltage (V)

GE

V

= 50V

5µs PULSE WIDTH

CC

T = 25 C

J

°

T = 150 C

J

°

5µs PULSE WIDTH

0.1

1

10

100

f , Frequency ( kHz )

0.0

2.0

4.0

6.0

8.0

10.0

Duty cycle : 50%

Tj = 125°C

Tsink = 90°C

Ta = 55°C

Gate drive as specified

Turn-on losses include effects of

reverse recovery

Power Dissipation = 9.2W for Heatsink Mount

Power Dissipation = 1.8W for typical

PCB socket Mount

60% of rated

voltage

Ideal diodes

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