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IRG4BC10KD Datasheet(PDF) 5 Page - International Rectifier

Part No. IRG4BC10KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4BC10KD Datasheet(HTML) 5 Page - International Rectifier

  IRG4BC10KD Datasheet HTML 1Page - International Rectifier IRG4BC10KD Datasheet HTML 2Page - International Rectifier IRG4BC10KD Datasheet HTML 3Page - International Rectifier IRG4BC10KD Datasheet HTML 4Page - International Rectifier IRG4BC10KD Datasheet HTML 5Page - International Rectifier IRG4BC10KD Datasheet HTML 6Page - International Rectifier IRG4BC10KD Datasheet HTML 7Page - International Rectifier IRG4BC10KD Datasheet HTML 8Page - International Rectifier IRG4BC10KD Datasheet HTML 9Page - International Rectifier Next Button
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IRG4BC10KD
www.irf.com
5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
J
°

R
= Ohm
V
= 15V
V
= 480V
G
GE
CC

I =
A
10
C

I =
A
5
C

I =
A
2.5
C
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
50
0
20
40
60
80
100
0.30
0.32
0.34
0.36
0.38
0.40
R
, Gate Resistance
G

V
= 480V
V
= 15V
T
= 25
C
I
= 5.0A
CC
GE
J
C
°
(
Ω )
1
10
100
0
100
200
300
400
V
, Collector-to-Emitter Voltage (V)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc

Cies

Coes

Cres
0
4
8
12
16
20
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G

V
= 400V
I
= 5.0A
CC
C


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