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RJH6086BDPK Datasheet(PDF) 2 Page - Renesas Technology Corp |
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RJH6086BDPK Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page RJH6086BDPK Preliminary R07DS0470EJ0100 Rev.1.00 Page 2 of 7 Sep 28, 2011 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current ICES 10 A VCE = 600 V, VGE = 0 Gate to emitter leak current IGES ±1 A VGE = ±30 V, VCE = 0 Gate to emitter cutoff voltage VGE(off) 3.0 5.5 V VCE = 10 V, IC = 1 mA VCE(sat) 2.65 3.5 V IC = 22 A, VGE = 15 V Note3 Collector to Emitter saturation voltage VCE(sat) 3.4 V IC = 45 A, VGE = 15 V Note3 Input capacitance Cies 1420 pF Output capacitance Coes 165 pF Reveres transfer capacitance Cres 15 pF VCE = 25 V VGE = 0 f = 1MHz td(on) 41 ns tr 71 ns td(off) 84 ns Switching time tf 36 ns IC = 30 A VCC = 300 V, VGE = 15 V Rg = 5 Inductive Load Collector to emitter diode forward voltage VECF — 1.4 1.9 V IF = 30 A Note3 Collector to emitter diode reverse recovery time trr — 100 — ns IF = 30 A diF/dt = 100 A/ s Notes: 3. Pulse test |
Similar Part No. - RJH6086BDPK_15 |
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Similar Description - RJH6086BDPK_15 |
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