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IRFZ24N Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFZ24N
Description  Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFZ24N Datasheet(HTML) 2 Page - International Rectifier

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IRFZ24N
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.052 –––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.07
VGS = 10V, ID = 10A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
4.5
–––
–––
S
VDS = 25V, ID = 10A
–––
–––
25
VDS = 55V, VGS = 0V
–––
–––
250
VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
Qg
Total Gate Charge
–––
–––
20
ID = 10A
Qgs
Gate-to-Source Charge
–––
–––
5.3
nC
VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
7.6
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
4.9
–––
VDD = 28V
tr
Rise Time
–––
34
–––
ID = 10A
td(off)
Turn-Off Delay Time
–––
19
–––
RG = 24Ω
tf
Fall Time
–––
27
–––
RD = 2.6Ω, See Fig. 10
„
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
370
–––
VGS = 0V
Coss
Output Capacitance
–––
140
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
65
–––
ƒ = 1.0MHz, See Fig. 5
nH
µA
nA
IDSS
Drain-to-Source Leakage Current
IGSS
LS
Internal Source Inductance
–––
–––
ns
S
D
G
4.5
7.5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
–––
LD
Internal Drain Inductance
–––
–––
–––
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ V
DD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 10A, VGS = 0V
„
trr
Reverse Recovery Time
–––
56
83
ns
TJ = 25°C, IF = 10A
Qrr
Reverse RecoveryCharge
–––
120
180
nC
di/dt = 100A/µs
„
Source-Drain Ratings and Characteristics
A
–––
–––
68
–––
–––
17
S
D
G


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