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IRFR1205 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFR1205
Description  Power MOSFET(Vdss=55V, Rds(on)=0.027ohm, Id=44A⑤)
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRFR1205 Datasheet(HTML) 1 Page - International Rectifier

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IRFR/U1205
HEXFET Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 0.027?
ID = 44A
Description
5/11/98
Parameter
Max.
Units
ID @ TC = 25C
Continuous Drain Current, VGS @ 10V
44
ID @ TC = 100C
Continuous Drain Current, VGS @ 10V
31
A
IDM
Pulsed Drain Current
160
PD @TC = 25C
Power Dissipation
107
W
Linear Derating Factor
0.71
W/C
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
210
mJ
IAR
Avalanche Current
25
A
EAR
Repetitive Avalanche Energy
11
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R?JC
Junction-to-Case
???
1.4
R?JA
Junction-to-Ambient (PCB mount) **
???
50
C/W
R?JA
Junction-to-Ambient
???
110
Thermal Resistance
D -P A K
T O -252 A A
I-P A K
TO -25 1A A
l Ultra Low On-Resistance
l Surface Mount (IRFR1205)
l Straight Lead (IRFU1205)
l Fast Switching
l Fully Avalanche Rated
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
PD - 91318B
www.irf.com
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