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SMG3400 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG3400 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Ω 01-Jun-2002 Rev. A Page 2 of 4 Source Leakage Current(Tj=25 ) : Elektronische Bauelemente SMG3400 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25 :::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.7 - 1.4 V VDS=VGS, ID=250uA Forward Transconductance gfs - 15 - S VDS=5V, ID=5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25 : ) - - 1 uA VDS=24V, VGS=0 Drain-Source Leakage Current(Tj=55 : ) IDSS - - 5 uA VDS=24V, VGS=0 - - 28 VGS=10V, ID=5.8A - - 33 VGS=4.5V, ID=5.0A Static Drain-Source On-Resistance RDS(ON) - - 52 m VGS=2.5V, ID=4.0A Total Gate Charge2 Qg - 9.7 12 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3.1 - nC ID=5.8A VDS=15V VGS=4.5V Turn-on Delay Time2 Td(on) - 3.3 - Rise Time Tr - 4.8 - Turn-off Delay Time Td(off) - 26.3 - Fall Time Tf - 4.1 - ns VDS=15V VGS=10V RG=3 RL=2.7 Input Capacitance Ciss - 823 1030 Output Capacitance Coss - 99 - Reverse Transfer Capacitance Crss - 77 - pF VGS=0V VDS=15V f=1.0MHz Gate Resistance Rg - 1.2 3.6 f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time2 Trr - 16 - ns Reverse Recovery Charge Qrr - 8.9 - nC IS=5A, VGS=0V dI/dt=100A/ s Continuous Source Current (Body Diode) IS - - 2.5 A VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad. : |
Similar Part No. - SMG3400_15 |
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Similar Description - SMG3400_15 |
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