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FYBL-7024AX-14 Datasheet(PDF) 3 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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FYBL-7024AX-14 Datasheet(HTML) 3 Page - Ningbo Foryard Optoelectronics Co., Ltd. |
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3 / 4 page  Model No. Rev. Min 5 — — — -40 -40 ■ ■ ■ ■ Electrical-Optical Characteristics ● Color Code & Chip Characteristics:(Test Condition:IF=20mA) Typ H Red 90nm 2.00 S Hi Red 20nm 1.80 D Super Red 20nm 1.90 E Orange 35nm 1.90 A Amber 35nm 1.90 Y Yellow 35nm 1.90 G Green 10nm 1.90 3.40 2.80 2.80 PG Pure Green 36nm 2.80 W White CCT:9500K 2.80 UHR Ultra Hi Red 20nm 1.90 UR Ultra Red 20nm 1.90 UE Ultra Orange 20nm 1.90 UA Ultra Amber AlGaInP 20nm 1.90 2.50 UY Ultra Yellow AlGaInP 20nm 1.90 2.50 UG Ultra Green AlGaInP 30nm 1.90 2.50 30nm 2.80 30nm 2.80 UW Ultra White CCT:9500K 2.80 Note: 1.Luminous Intensity is based on the Foryard standards. 2.Pay attention about static for InGaN Page ： 3/4 14~18 570nm 590nm 15~20 14~20 610nm 1 Luminous Intensity (Iv) Unit:mcd AlGaAs/SH 660nm 700nm GaP 2.50 ℃ +85 13~18 mA 150 2.50 Storage Temperature Topr Symbol 100 V — Pd Max GaP Http://www.foryard.com Segment-to-Segment Luminous Intensity ratio(Iv-M) 1.5:1 610nm 6~12(mw) 4~6(mw) 470nm 80~90~120 3.80 80~90~120 3.80 3.80 AlGaInP 625nm 2.50 2.50 2.50 AlGaInP 30~60~80 Ultra Blue 26~38 13~18 625nm GaAsP GaAsP 2.50 2.50 0.7~1(mw) 60~120 AlGaInP 640nm 30~60 430nm 6~12(mw) 60~100 3.80 460nm 520nm InGaN 60nm 4.40 UB 460nm 635nm 3.80 570nm 470nm 590nm B Blue InGaN Ultra brightness InGaN X=0.29,Y=0.30 3.80 20~30 InGaN X=0.29,Y=0.30 3.80 180~200 InGaN GaAsP 2.50 AlGaAs/DH 650nm Tstr — +85 Operating Temperature Max Unit Test Condition Peak Wave Length(λP) Spectral Line halfwidth(∆ λ1/2) mA mW ℃ Standard brightness Forward Voltage(VF) Unit:V Ipeak ■ ■ ■ ■ Absolute maximum ratings (Ta=25 ℃) — Value Reverse Voltage VR IR=30 Parameter FYBL-7024AX-XX A Model No. ： ： ： ：FYBL-7024AX-XX 40~100~150 50~140~190 Duty=0.1mS,1KHz Forward Current IF — Power Dissipation Emitting Color Dice Material 2.50 (Ta=25 ℃) — 2.50 30 Pulse Current |
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