RJP4009ANS

Preliminary

R07DS0370EJ0200 Rev.2.00

Page 3 of 4

Apr 27, 2011

Application Example

+

–

8

Xe Tube

Trigger Transformer

76

5

12

3

4

Maximum Operation

Conditions

IGBT driver

Precautions on Usage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

turn-off dv/dt must become less than 400 V/

μs. In general, when R

full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over

3 seconds.