RJM0404JSC_15 datasheet(5/12 Pages) RENESAS

Part #	RJM0404JSC

Description	Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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5 / 12 page

RJM0404JSC

Preliminary

R07DS0338EJ0500 Rev.5.00

Page 5 of 11

May 11, 2011

 MOS1, 2, 3(Nch)

20

16

12

8

4

0

50

40

30

20

10

8

1624

3240

0

Gate Charge Qg (nc)

Dynamic Input Characteristics

0

0.4

0.8

1.2

1.6

2.0

20

15

5

10

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

D. U. T

Rg

IAP

Monitor

VDS

Monitor

VDD

50

Ω

Vin

15 V

0

ID

VDS

IAP

V (BR)DSS

L

VDD

EAR =

L

• IAP2 •

2

1

VDSS

VDSS – VDD

Avalanche Test Circuit

Avalanche Waveform

Tc = 25

°C

ID = 20 A

VDS

VGS

VGS = 0 V, −5 V

10 V

VDD = 25 V

10 V

5 V

VDD = 25 V

10 V

5 V

010

20

40

30

10000

1000

100

10

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Tc = 25

°C

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

100

80

60

40

20

25

50

75

100

125

150

175

0

Channel Temperature Tch (

°C)

Avalanche Energy vs.

Channel Temperature Derating

Tc = 25

°C

Pulse Test

IAP = 20 A

VDD = 25 V

duty < 0.1 %

Rg

≥ 50 Ω

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RJM0404JSC Datasheet(PDF) 5 Page - Renesas Technology Corp

RJM0404JSC Datasheet(HTML) 5 Page - Renesas Technology Corp

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