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2SK3210(L) Datasheet(PDF) 4 Page - Renesas Technology Corp |
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2SK3210(L) Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3210(L), 2SK3210(S) Preliminary R07DS0409EJ0400 Rev.4.00 Page 4 of 7 May 16, 2011 250 200 150 100 50 –40 0 40 80 120 160 0 0.1 0.2 1 520 30 1 3 0.3 0.1 10 10 ID = 20 A VGS = 4 V 10 V 5, 10 A 100 0.5 2 50 100 25 °C Tc = –25 °C 75 °C 5, 10 A 20 A Pulse Test VDS = 10 V Pulse Test Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current 0.1 1 3 10 100 0.3 30 010 20 30 40 50 10000 1000 3000 300 10 30 100 500 400 300 200 100 0 20 16 12 8 4 40 80 120 160 200 0 5000 500 200 100 50 0.1 0.2 1 5 10 1000 200 100 20 50 10 500 ID = 30A VGS VDS 20 10 0.5 2 20 VDD = 100 V 50 V 25 V VDD = 100 V 50 V 25 V VGS = 0 f = 1 MHz Ciss Coss Crss 1000 tr VGS = 10 V, VDD = 30 V PW = 5 μs, duty < 1 % tf td(on) td(off) 50 2000 di / dt = 50 A / μs VGS = 0, Ta = 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics |
Similar Part No. - 2SK3210(L)_15 |
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Similar Description - 2SK3210(L)_15 |
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