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IRFP450LC Datasheet(PDF) 2 Page - International Rectifier

Part # IRFP450LC
Description  Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP450LC Datasheet(HTML) 2 Page - International Rectifier

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IRFP450LC
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.4
V
TJ = 25°C, IS = 14A, VGS = 0V
trr
Reverse Recovery Time
–––
580
870
ns
TJ = 25°C, IF = 14A
Qrr
Reverse Recovery Charge
–––
5.1
7.7
µC
di/dt = 100A/µs
ton
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 7.0mH
RG = 25Ω, IAS = 14A. (See Figure 12)
ISD ≤ 14A, di/dt ≤ 130A/µs, V DD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width
≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.59
–––
V/°C
Reference to 25°C, I D = 1mA
RDS(ON)
Static Drain-to-Source On-Resistance
–––
–––
0.40
VGS = 10V, ID = 8.4A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
8.7
–––
–––
S
VDS = 50V, ID = 8.4A
–––
–––
25
VDS = 500V, VGS = 0V
–––
–––
250
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
Qg
Total Gate Charge
–––
–––
74
ID = 14A
Qgs
Gate-to-Source Charge
–––
–––
19
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
35
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 250V
tr
Rise Time
–––
49
–––
ID = 14A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 6.2Ω
tf
Fall Time
–––
30
–––
RD = 17Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 2200
–––
VGS = 0V
Coss
Output Capacitance
–––
320
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
28
–––
ƒ = 1.0MHz, See Fig. 5
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
–––
–––
56
–––
–––
14
A
nH
LD
Internal Drain Inductance
–––
5.0
–––
LS
Internal Source Inductance
–––
13
–––
IDSS
Drain-to-Source Leakage Current
IGSS
ns
µA
nA
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