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RJK0330DPB-01 Datasheet(PDF) 1 Page - Renesas Technology Corp |
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RJK0330DPB-01 Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page R07DS0266EJ0500 Rev.5.00 Page 1 of 6 Mar 01, 2011 Preliminary Datasheet RJK0330DPB-01 Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) G D SSS 4 1 23 5 1, 2, 3 Source 4 Gate 5 Drain 1 2 3 4 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 45 A Drain peak current ID(pulse) Note1 180 A Body-drain diode reverse drain current IDR 45 A Avalanche current IAP Note 2 22 A Avalanche energy EAR Note 2 48.4 mJ Channel dissipation Pch Note3 55 W Channel to case thermal resistance ch-c Note3 2.27 C/W Channel temperature Tch 150 C Storage temperature Tstg –55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25 C, Rg 50 3. Tc = 25 C R07DS0266EJ0500 (Previous: REJ03G1639-0400) Rev.5.00 Mar 01, 2011 |
Similar Part No. - RJK0330DPB-01_15 |
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