RJH60F5DPQ-A0_15 datasheet(2/8 Pages) RENESAS

Part #	RJH60F5DPQ-A0

Description	600 V - 40 A - IGBT High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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RJH60F5DPQ-A0

Preliminary

R07DS0326EJ0200 Rev.2.00

Page 2 of 7

Jul 22, 2011

Electrical Characteristics

(Tj = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector current

ICES



100

A

VCE = 600V, VGE = 0

Gate to emitter leak current

IGES



±1

A

VGE = ±30 V, VCE = 0

Gate to emitter cutoff voltage

VGE(off)

4



8

V

VCE = 10 V, IC = 1 mA

VCE(sat)



1.37

1.8

V

IC = 40 A, VGE = 15 V

Note3

Collector to emitter saturation voltage

VCE(sat)



1.7



V

IC = 80 A, VGE = 15 V

Note3

Input capacitance

Cies



2780



pF

Output capacitance

Coes



122



pF

Reverse transfer capacitance

Cres



43



pF

VCE = 25 V

VGE = 0 V

f = 1 MHz

td(on)



53



ns

tr



145



ns

td(off)



105



ns

Switching time

tf



85



ns

IC = 30 A,

VCE = 400 V, VGE = 15 V

Rg = 5

 Note3,

Inductive load

VECF1



1.2

2.1

V

IF = 20 A

Note3

C-E diode forward voltage

VECF2



1.5



V

IF = 40 A

Note3

C-E diode reverse recovery time

trr



90



ns

IF = 20 A

diF/dt = 100 A/s

Notes: 3. Pulse test

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