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RJH1CF6RDPQ-80 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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RJH1CF6RDPQ-80 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page RJH1CF6RDPQ-80 Preliminary R07DS0356EJ0100 Rev.1.00 Page 3 of 6 May 12, 2010 Main Characteristics 0 20 60 40 80 Collector to Emitter Saturation Voltage vs. Junction Temparature (Typical) Junction Temparature Tj (°C) Typical Output Characteristics 12345 0 0 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Typical Transfer Characteristics 02468 10 VCE = 10 V Pulse Test Gate to Emitter Voltage VGE (V) 25°C –25 °C Tc = 75 °C Gate to Emitter Cutoff Voltage vs. Junction Temparature (Typical) Junction Temparature Tj (°C) Maximum Safe Operation Area 1000 100 1 10 0.01 0.1 1100 10 10000 1000 Tc = 25 °C Single pulse PW = 10 μs 1 3 2 4 5 6 8 10 12 20 16 18 14 IC = 100 A 0 1 2 3 4 5 −25 0 25 75 125 50 100 150 VGE = 15 V Pulse Test 55 A 30 A IC = 100 A 0 2 6 4 8 10 20 60 40 80 100 −25 0 25 75 125 50 100 150 VCE = 10 V Pulse Test 1 mA IC = 10 mA Ta = 25°C Pulse Test 55 A 30 A Ta = 25°C Pulse Test V GE = 7 V 7.4 V 7.6 V 7.8 V 8.2 V 8.4 V 7.2 V 9 V 8 V 15 V 20 V 10 V |
Similar Part No. - RJH1CF6RDPQ-80_15 |
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Similar Description - RJH1CF6RDPQ-80_15 |
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