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NP100N04NUJ Datasheet(PDF) 2 Page - Renesas Technology Corp

Part No. NP100N04NUJ
Description  MOS FIELD EFFECT TRANSISTOR
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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NP100N04NUJ Datasheet(HTML) 2 Page - Renesas Technology Corp

   
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NP100N04NUJ
Chapter Title
R07DS0364EJ0100 Rev.1.00
Page 2 of 6
Jun 13, 2011
Electrical Characteristics (TA = 25
°C)
Item
Symbol
MIN.
TYP.
MAX.
Unit
Test Conditions
Zero Gate Voltage Drain Current
IDSS
1.0
μA
VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS
±100
nA
VGS =
±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th)
2.0
3.0
4.0
V
VDS = VGS, ID = 250
μ A
Forward Transfer Admittance
1
| yfs |
45
87
S
VDS = 5 V, ID = 50 A
Drain to Source On-state
Resistance
1
RDS(on)
2.5
3.0
m
Ω
VGS = 10 V, ID = 50 A
Input Capacitance
Ciss
5600
8400
pF
VDS = 25 V,
Output Capacitance
Coss
920
1380
pF
VGS = 0 V,
Reverse Transfer Capacitance
Crss
340
620
pF
f = 1 MHz
Turn-on Delay Time
td(on)
25
60
ns
VDD = 20 V, ID = 50 A,
Rise Time
tr
15
40
ns
VGS = 10 V,
Turn-off Delay Time
td(off)
93
190
ns
RG = 0
Ω
Fall Time
tf
13
40
ns
Total Gate Charge
QG
110
170
nC
Gate to Source Charge
QGS
22
nC
Gate to Drain Charge
QGD
32
nC
VDD = 32 V,
VGS = 10 V,
ID = 100 A
Body Diode Forward Voltage
1
VF(S-D)
0.9
1.5
V
IF = 100 A, VGS = 0 V
Reverse Recovery Time
trr
55
ns
Reverse Recovery Charge
Qrr
77
nC
IF = 100 A, VGS = 0 V,
di/dt = 100 A/
μ s
Note: 1. Pulsed test
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
= 1 s
Duty Cycle
1%
τ
μ
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
0
90%
90%
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
10%


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