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NP100N04NUJ Datasheet(PDF) 5 Page - Renesas Technology Corp |
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NP100N04NUJ Datasheet(HTML) 5 Page - Renesas Technology Corp |
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5 / 8 page 
NP100N04NUJ Chapter Title R07DS0364EJ0100 Rev.1.00 Page 5 of 6 Jun 13, 2011 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 1 2 3 4 5 -100 -50 0 50 100 150 200 VGS = 10 V ID = 50 A Pulsed Tch - Channel Temperature - °C 100 1000 10000 100000 0.01 0.1 1 10 100 Ciss Coss Crss VGS = 0 V f = 1 MHz VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 1000 0.1 1 10 100 VDD = 20 V VGS = 10 V RG = 0 Ω td(off) td(on) tr tf ID - Drain Current - A 0 5 10 15 20 25 30 35 40 45 50 0 2040 6080 100 120 0 1 2 3 4 5 6 7 8 9 10 VGS VDS VDD = 32 V 20 V 8 V ID = 100 A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Pulsed 0 V VGS = 10 V VF(S-D) - Source to Drain Voltage - V 1 10 100 0.1 1 10 100 di/dt = 100 A/μs VGS = 0 V IF - Drain Current - A |
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