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NP100N04NUJ Datasheet(PDF) 4 Page - Renesas Technology Corp |
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NP100N04NUJ Datasheet(HTML) 4 Page - Renesas Technology Corp |
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4 / 8 page 
NP100N04NUJ Chapter Title R07DS0364EJ0100 Rev.1.00 Page 4 of 6 Jun 13, 2011 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 0 50 100 150 200 250 300 350 400 450 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS = 10 V Pulsed VDS - Drain to Source Voltage - V 0.001 0.01 0.1 1 10 100 1000 012 345 TA = −55°C −25°C 25°C 75°C 125°C 150°C 175°C VDS = 10 V Pulsed VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0 1 2 3 4 5 -100 -50 0 50 100 150 200 VDS = VGS ID = 250 μA Tch - Channel Temperature - °C 1 10 100 1000 0.1 1 10 100 VDS = 10 V Pulsed TA = −55°C −25°C 25°C 75°C 125°C 150°C 175°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 1 2 3 4 0.1 1 10 100 1000 VGS = 10 V Pulsed ID - Drain Current - A 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 Pulsed ID = 100 A 50 A 20 A VGS - Gate to Source Voltage - V |
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