R2A20118ASP

Preliminary

R03DS0002EJ0100 Rev.1.00

Page 6 of 9

Jul 14, 2010

Electrical Characteristics (cont.)

(Ta = 25°C, VCC = 12 V, RT = 33 k

, BO = 5 V, OCP = TL = OVP2 = GND, CRAMP = 820 pF, FB = COMP,

RAMP-GAIN = OPEN)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Phase delay

Phase

160

180

200

deg

*

Slave

control

On time ratio

Ton-ratio

0

—

5

%

*

Master gate drive rise time

tr-gdm

—

20

100

ns

CL = 100 pF

tr

90%

10%

Slave gate drive rise time

tr-gds

—

20

100

ns

CL = 100 pF

tr

90%

10%

Master gate drive fall time

tf-gdm

—

5

30

ns

CL = 100 pF

tf

90%

10%

Slave gate drive fall time

tf-gds

—

5

30

ns

CL = 100 pF

tf

90%

10%

Vol1-gdm

—

0.02

0.1

V

Isink = 2 mA

Master gate drive low voltage

Vol2-gdm

—

0.01

0.2

V

Isink = 1 mA, VCC = 5 V

Master gate drive high voltage

Voh-gdm

11.5

11.9

—

V

Isource = –2 mA *

1

Vol1-gds

—

0.02

0.1

V

Isink = 2 mA

Slave gate drive low voltage

Vol2-gds

—

0.01

0.2

V

Isink = 1 mA, VCC = 5 V

Gate drive

Slave gate drive high voltage

Voh-gds

11.5

11.9

—

V

Isource = –2 mA *

1

Over

current

protection

OCP threshold voltage

Vocp

0.27

0.30

0.33

V

Dynamic OVP threshold voltage

Vdovp

VFB



1.035

VFB



1.050

VFB



1.065

V

COMP = 2.5 V

Static OVP threshold voltage

Vsovp1

VFB



1.075

VFB



1.090

VFB



1.105

V

COMP = 2.5 V

Static OVP hysteresis

Hys-sovp1

50

100

150

mV

COMP = 2.5 V

FB Low detect threshold

voltage

Vfblow

0.45

0.50

0.55

V

COMP = 2.5 V

FB Low detect hysteresis

Hysfblow

0.16

0.20

0.24

V

COMP = 2.5 V

OVP2 threshold voltage

Vovp2

2.670

2.725

2.780

V

Measured pin: OVP2

Over

voltage

protection

OVP2 pin input bias current

Iovp2

–0.5

–0.3

–0.1

A

Measured pin: OVP2

OVP2 = 3 V *

1

Notes: *1 Design spec.

*2

Tperiod (25

μs)

Tdelay

Ton-s

GD-M

GD-S

Ton-m (17

μs)

Phase =

× 360 [deg]

Tdelay

Tperiod

Ton-ratio =

× 100 [%]

Ton-s

Ton-m

1 –