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NP35N04YUG Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # NP35N04YUG
Description  MOS FIELD EFFECT TRANSISTOR
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP35N04YUG Datasheet(HTML) 5 Page - Renesas Technology Corp

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NP35N04YUG
Chapter Title
R07DS0016EJ0100 Rev.1.00
Page 5 of 6
Jul 01, 2010
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
5
10
15
20
25
-100
0
100
200
VGS = 10 V
ID = 17.5 A
Pulsed
Tch - Channel Temperature -
°C
10
100
1000
10000
0.1
1
10
100
Ciss
Coss
Crss
VGS = 0 V
f = 1MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
1000
0.1
1
10
100
VDD = 20 V
VGS = 10 V
RG = 0
Ω
td(off)
td(on)
tr
tf
ID - Drain Current - A
0
5
10
15
20
25
30
35
40
0
1020
3040
0
2
4
6
8
10
12
VDS
VGS
ID = 35 A
VDD = 32 V
20 V
8 V
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
0.1
1
10
100
1000
00.5
11.5
0 V
VGS = 10 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
1
10
100
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
IF - Drain Current - A


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