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SGM3055 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SGM3055 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 4 page  Elektronische Bauelemente SGM3055 5.8A , 30V , RDS(ON) 28 m N-Channel Enhancement Mode Power MOSFET 29-May-2012 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View 1 2 3 4 A B D L K F G H J E C RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The GM3055 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Fast Switching Dynamic dv/dt Rating Repetitive Avalanche Rated Simple Drive Requirement MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V TA = 25°C 5.8 A Continuous Drain Current 1 TA = 70°C ID 4.7 A Pulsed Drain Current 2 IDM 30 A Power Dissipation 3 PD 1.5 W Linear Derating Factor 0.0118 W / °C Operating Junction & Storage Temperature TJ, TSTG -55~150 °C Thermal Resistance Rating Thermal Resistance Junction-Ambient 1(Max). RθJA 85 °C / W Thermal Resistance Junction-Case 1(Max). RθJC 30 °C / W SOT-89 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.60 G - - B 4.05 4.25 H 0.89 1.20 C 2.40 2.60 J 0.35 0.41 D 1.40 1.60 K 0.70 0.80 E 3.00 REF. L 1.50 REF. F 0.40 0.52 3055 = Date code G S D |
Similar Part No. - SGM3055_15 |
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Similar Description - SGM3055_15 |
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