IRFB13N50A datasheet(1/8 Pages) IRF

Part #	IRFB13N50A

Description	Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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12/10/01

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1

PD - 94339

SMPS MOSFET

HEXFET® Power MOSFET

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

Benefits

Applications

l Low Gate Charge Qg results in Simple Drive Requirement

l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

l Fully Characterized Capacitance and Avalanche Voltage

and Current

VDSS

RDS(on) max

ID

500V

0.450

Ω

14A

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

14

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

9.1

A

IDM

Pulsed Drain Current

56

PD @TC = 25°C

Power Dissipation

250

W

Linear Derating Factor

2.0

W/°C

VGS

Gate-to-Source Voltage

± 30

V

dv/dt

Peak Diode Recovery dv/dt

9.2

V/ns

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300

(1.6mm from case )

°C

Mounting torqe, 6-32 or M3 screw

10

lbf•in (1.1N•m)

Absolute Maximum Ratings

Symbol

Parameter

Typ.

Max.

Units

EAS

Single Pulse Avalanche Energy

–––

560

mJ

IAR

Avalanche Current

–––

14

A

EAR

Repetitive Avalanche Energy

–––

25

mJ

Avalanche Characteristics

TO-220AB

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.50

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

IRFB13N50A

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