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RJK6036DP3-A0 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK6036DP3-A0
Description  600V - 2A - MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6036DP3-A0 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0841EJ0100 Rev.1.00
Page 1 of 3
Jul 05, 2011
Preliminary Datasheet
RJK6036DP3-A0
600V - 2A - MOS FET
High Speed Power Switching
Features
 Low on-resistance
RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
 Low drive current
 High density mounting
Outline
Package name: SOT-223
4
1
2
3
D
S
G
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSP0004ZB-A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
Note1
2
A
Drain peak current
ID (pulse)
Note2
4
A
Body-drain diode reverse drain current
IDR
Note1
2
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note2
4
A
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. Limited Tch max.. Value at Tc = 25
C
2. Pulse width limited by safe operating area.
R07DS0841EJ0100
Rev.1.00
Jul 05, 2011


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