PL10757EJ01V0DS datasheet(6/10 Pages) RENESAS

Part #	PL10757EJ01V0DS

Description	1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION

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Manufacturer	RENESAS [Renesas Technology Corp]

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Data Sheet PL10757EJ01V0DS

4

NX7337BJ-AA

ORDERING INFORMATION

Part Number

FIange Type

NX7337BJ-AA

flat mount flange

ABSOLUTE MAXIMUM RATINGS (TC = 25

°C, unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Pulsed Forward Current

*1

IFP

1.2

A

Reverse Voltage

VR

2.0

V

Operating Case Temperature

TC

−20 to +60

°C

Storage Temperature

Tstg

−40 to +85

°C

Lead Soldering Temperature

Tsld

350 (3 sec.)

°C

Relative Humidity (noncondensing)

RH

85

%

*1 Pulse Condition: Pulse Width (PW) = 10

μs, Duty = 1%

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Forward Voltage

VFP

IFP = 800 mA,

PW = 10

μs, Duty = 1%

2.5

4.0

V

Threshold Current

Ith

35

65

mA

Optical Output Power from Fiber

Pf

IFP = 800 mA,

PW = 10

μs, Duty = 1%

150

180

mW

Center Wavelength

λC

RMS (

−20 dB), IFP = 800 mA,

PW = 10

μs, Duty = 1%

1 290

1 310

1 330

nm

Spectral Width

σ

RMS (

−20 dB), IFP = 800 mA,

PW = 10

μs, Duty = 1%

10.0

nm

Rise Time

tr

10-90%

2.0

ns

Fall Time

tf

90-10%

2.0

ns

ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +60

°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Threshold Current

Ith

80

mA

Optical Output Power from Fiber

Pf

IFP = 800 mA,

PW = 10

μs, Duty = 1%

75

mW

Center Wavelength

λC

RMS (

−20 dB), IFP = 800 mA,

PW = 10

μs, Duty = 1%

1 280

1 342.5

nm

Temperature Dependency of

Center Wavelength

Δλ/ΔT

0.35

nm/

°C

Spectral Width

σ

RMS (

−20 dB), IFP = 800 mA,

PW = 10

μs, Duty = 1%

10

nm

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PL10757EJ01V0DS Datasheet(PDF) 6 Page - Renesas Technology Corp

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