PL10692EJ03V0DS datasheet(1/9 Pages) RENESAS

Part #	PL10692EJ03V0DS

Description	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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To our customers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1st, 2010

Renesas Electronics Corporation

Issued by:

Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6410GH	178Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6411GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6411GH	177Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
	NX6410GH	170Kb / 8P	LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
California Eastern Labs	NX5315EH	283Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
California Eastern Labs	NX5323EH	173Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE