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NE3515S02-T1C Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # NE3515S02-T1C
Description  X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NE3515S02-T1C Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet PG10708EJ01V0DS
4
NE3515S02
OUTPUT POWER, LINEAR GAIN, DRAIN CURRENT
GATE CURRENT vs. INPUT POWER
ID = 10 mA
VDS = 2 V
0
–5
–10
–15
–20
–25
–30
–35
Input Power Pin (1 tone) (dBm)
–15
5
10
0
–10
–5
20
18
16
14
12
10
8
6
4
2
0
100
90
80
70
60
50
40
30
20
10
0
f = 12 GHz, VDS = 3 V
ID = 25 mA set (Non-RF)
PO (1 dB) optimized
Pout
GL
ID
IG
|S12e|
2
|S21e|
2
Frequency f (GHz)
|S21e|2, MAG, MSG, |S12e|2 vs.
FREQUENCY
25
5
10
15
20
0
0
510
15
20
30
25
MAG, MSG
ID = 25 mA
VDS = 3 V
0
–5
–10
–15
–20
–25
–30
–35
|S12e|
2
Frequency f (GHz)
|S21e|2, MAG, MSG, |S12e|2 vs.
FREQUENCY
25
5
10
15
20
0
0
510
15
20
30
25
MAG, MSG
|S21e|
2
Remark The graphs indicate nominal characteristics.


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