PD -94030A

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design , that Inter-

national Rectifier is well known for,

provides thedesigner

with an extremely efficient and reliable device for use

in battery and load management.

The TSSOP-8 package, has 45% less footprint area of the

standard SO-8. This makes the TSSOP-8 an ideal device

for applications where printed circuit board space is at a

premium.

The low profile (<1.1mm) of the TSSOP-8 will allow it to fit

easily into extremely thin application environments such

as portable electronics and PCMCIA cards.

IRF7752

Description

TSSOP-8

Parameter

Max.

Units

Drain- Source Voltage

30

V

±4.6

±3.7

A

Pulsed Drain Current



±37

Power Dissipation

1.0

Power Dissipation

0.64

Linear Derating Factor

8.0

mW/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

125

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

1

3/25/01

30V

4.6A

3.9A

4

3

2

1

1 = D1

2 = S 1

3 = S 1

4 = G1

8 = D2

7 = S 2

6 = S 2

5 = G2

5

6

7

8