Parameter

Max.

Units

Drain- Source Voltage

-40

V

-4.6

-3.7

A

Pulsed Drain Current



-19

Power Dissipation

ƒ

1.5

Power Dissipation

ƒ

1.0

Linear Derating Factor

12

mW/°C

Gate-to-Source Voltage

± 20

V

Junction and Storage Temperature Range

-55 to + 150

°C

3/19/01

www.irf.com

1

IRF7704

PD- 94160

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

83

°C/W

Thermal Resistance

Absolute Maximum Ratings

W

Ω)

Ω)

Ω)

Ω)

-40V

-4.6A

-3.7A

Description

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides thedesigner

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

4 = G

3 = S

2 = S

1 = D

1

2

3

4

G

D

S

5

6

7

8

8 = D

7 = S

6 = S

5 = D