RJF0613JSP_15 datasheet(4/8 Pages) RENESAS

Part #	RJF0613JSP

Description	60 V - 10 A - N Channel MOS FET Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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4 / 8 page

RJF0613JSP

Target Specifications

R07DS0874EJ0100 Rev.1.00

Page 4 of 7

Aug 29, 2012

55

50

–50 –25

0

25

75 100

50

150

125

10

20

25

40

15

30

35

45

10 V

VGS = 4 V

ID = 5 A

1 A

2.5 A

100

10

1

0.1

1

100

10

Tc = –40°C

25°C

150°C

0.1

1

10

100

1000

10

100

1

di / dt = 50 A /

μs

VGS = 0, Ta = 25°C

010

20

30

40

60

50

10000

3000

1000

300

100

30

10

0

4

6

8

2

10

0.2

0.4

0.6

0.8

1.0

VGS = 5 V

100

10

1

10

100

0.1

tf

tr

td(off)

td(on)

0 V

VGS = 10 V, VDD = 30 V

PW = 300

μs, duty ≤ 1 %

Coss

VGS = 0

f = 1 MHz

ID = 5 A

1 A

2.5 A

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

VDS = 10 V

Pulse Test

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain Current

ID (A)

Switching Characteristics

Pulse Test

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