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IRF7413 Datasheet(PDF) 1 Page - International Rectifier

Part # IRF7413
Description  Power MOSFET(Vdss=30V, Id=12A)
Download  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7413 Datasheet(HTML) 1 Page - International Rectifier

  IRF7413 Datasheet HTML 1Page - International Rectifier IRF7413 Datasheet HTML 2Page - International Rectifier IRF7413 Datasheet HTML 3Page - International Rectifier IRF7413 Datasheet HTML 4Page - International Rectifier IRF7413 Datasheet HTML 5Page - International Rectifier IRF7413 Datasheet HTML 6Page - International Rectifier IRF7413 Datasheet HTML 7Page - International Rectifier IRF7413 Datasheet HTML 8Page - International Rectifier  
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www.irf.com
1
3/19/02
IRF7413
SMPS MOSFET
HEXFET® Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Parameter
Max.
Units
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
12
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
9.6
A
IDM
Pulsed Drain Current

96
PD @TA = 25°C
Power Dissipation
„
2.5
W
Linear Derating Factor
0.02
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
†
1.0
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
 through † are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
VDSS
RDS(on) max(mW)
ID
30V
11@VGS = 10V
12A
Symbol
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
RθJA
Junction-to-Ambient
„
–––
50
°C/W
Thermal Resistance
PD- 91330F


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