NP180N04TUG-E1-AYNote datasheet(3/10 Pages) RENESAS

Part #	NP180N04TUG-E1-AYNote

Description	SWITCHING N-CHANNEL POWER MOS FET

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Manufacturer	RENESAS [Renesas Technology Corp]

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MOS FIELD EFFECT TRANSISTOR

NP180N04TUG

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D18896EJ1V0DS00 (1st edition)

Date Published September 2007 NS

Printed in Japan

2007

DESCRIPTION

The NP180N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP180N04TUG-E1-AY

Note

NP180N04TUG-E2-AY

Note

Pure Sn (Tin)

Tape

800 p/reel

TO-263-7pin (MP-25ZT)

typ. 1.5 g

Note Pb-free (This product does not contain Pb in the external electrode).

FEATURES

• Super low on-state resistance

RDS(on) = 1.2 m

Ω TYP. / 1.5 mΩ MAX. (VGS = 10 V, ID = 90 A)

• High Current Rating

ID(DC) =

±180 A

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

40

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25

°C)

ID(DC)

±180

A

Drain Current (pulse)

Note1

ID(pulse)

±720

A

Total Power Dissipation (TC = 25

°C)

PT1

288

W

Total Power Dissipation (TA = 25

°C)

PT2

1.8

W

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Single Avalanche Energy

Note2

EAS

518

mJ

Repetitive Avalanche Current

Note3

IAR

72

A

Repetitive Avalanche Energy

Note3

EAR

518

mJ

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

3. RG = 25

Ω, Tch(peak) ≤ 150°C

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C)

0.52

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

83.3

°C/W

(TO-263-7pin)

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