IRF5Y3315CM datasheet(1/7 Pages) IRF

Part #	IRF5Y3315CM

Description	POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.085ohm, Id=18A*)

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Manufacturer	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

18*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

12

IDM

Pulsed Drain Current ➀

72

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

94

mJ

IAR

Avalanche Current ➀

12

A

EAR

Repetitive Avalanche Energy ➀

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

3.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10sec)

Weight

4.3 (Typical)

g

oC

A

6/22/01

www.irf.com

1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF5Y3315CM

150V

0.085

Ω 18A*

For footnotes refer to the last page

TO-257AA

HEXFET® POWER MOSFET

IRF5Y3315CM

THRU-HOLE (TO-257AA)

150V, N-CHANNEL

Fifth Generation HEXFET®

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

* Current is limited by package

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Light Weight

PD - 94268

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