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NP82N06PDG-E1-AYNote Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # NP82N06PDG-E1-AYNote
Description  SWITCHING N-CHANNEL POWER MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP82N06PDG-E1-AYNote Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet D18227EJ1V0DS
4
NP82N06PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
0
100
200
300
024
68
10
VGS = 10 V
Pulsed
VGS = 5 V
VDS - Drain to Source Voltage - V
0.001
0.01
0.1
1
10
100
1000
01
23
45
VDS = 10 V
Pulsed
−55°C
−25°C
85°C
25°C
125°C
150°C
TA = 175°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
0.0
0.5
1.0
1.5
2.0
2.5
-100
0
100
200
VDS = VGS
ID = 250
μA
Tch - Channel Temperature -
°C
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
85°C
125°C
150°C
175°C
TA =
−55°C
−25°C
25°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
1
2
3
4
5
6
7
8
9
10
1
10
100
1000
Pulsed
VGS = 10 V
VGS = 5 V
ID - Drain Current - A
0
1
2
3
4
5
6
7
8
9
10
11
12
0
5
10
15
20
Pulsed
ID = 16.4 A
ID = 41 A
ID = 82 A
VGS - Gate to Source Voltage - V


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