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NP55N03SUG Datasheet(PDF) 7 Page - Renesas Technology Corp |
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NP55N03SUG Datasheet(HTML) 7 Page - Renesas Technology Corp |
7 / 10 page Data Sheet D18320EJ2V0DS 5 NP55N03SUG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 2 4 6 8 -75 -25 25 75 125 175 225 VGS = 10 V ID = 28 A Pulsed Tch - Channel Temperature - °C 100 1000 10000 0.1 1 10 100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 1000 0.1 1 10 100 VDD = 15 V VGS = 10 V RG = 0 Ω td(off) td(on) tf tr ID - Drain Current - A 0 5 10 15 20 25 30 35 40 0 1020 3040 5060 70 0 3 6 9 12 ID = 55 A VGS VDS VDD = 24 V 15 V 6 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 0 V Pulsed VGS = 10 V VF(S-D) - Source to Drain Voltage - V 1 10 100 0.1 1 10 100 VGS = 0 V di/dt = 100 A/ μs IF - Diode Forward Current - A |
Similar Part No. - NP55N03SUG_15 |
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Similar Description - NP55N03SUG_15 |
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