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NP50P04SDG-E1-AYNote Datasheet(PDF) 8 Page - Renesas Technology Corp |
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NP50P04SDG-E1-AYNote Datasheet(HTML) 8 Page - Renesas Technology Corp |
8 / 9 page Data Sheet D19072EJ2V0DS 6 NP50P04SDG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 6.5 ±0.2 2.3 ±0.1 0.5 ±0.1 0.76 ±0.12 0 to 0.25 0.5 ±0.1 1.0 No Plating No Plating 5.1 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
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