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NP36P06SLG Datasheet(PDF) 3 Page - Renesas Technology Corp |
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NP36P06SLG Datasheet(HTML) 3 Page - Renesas Technology Corp |
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3 / 9 page  The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET DATA SHEET Document No. D18008EJ5V0DS00 (5th edition) Date Published November 2007 NS Printed in Japan 2006 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DESCRIPTION The NP36P06SLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 30 m Ω MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 40 m Ω MAX. (VGS = −4.5 V, ID = −18 A) • Low input capacitance Ciss = 3200 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS −60 V Gate to Source Voltage (VDS = 0 V) VGSS m20 V Drain Current (DC) (TC = 25 °C) ID(DC) m36 A Drain Current (pulse) Note1 ID(pulse) m108 A Total Power Dissipation (TC = 25 °C) PT1 56 W Total Power Dissipation (TA = 25 °C) PT2 1.2 W Channel Temperature Tch 175 °C Storage Temperature Tstg −55 to +175 °C Single Avalanche Current Note2 IAS 23.4 A Single Avalanche Energy Note2 EAS 54.8 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25 °C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 2.68 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W ORDERING INFORMATION PART NUMBER PACKAGE NP36P06SLG TO-252 (MP-3ZK) (TO-252) |
Similar Part No. - NP36P06SLG_15 |
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Similar Description - NP36P06SLG_15 |
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