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2SK3377 Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SK3377 Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D14328EJ5V0DS00 (5th edition) Date Published February 2007 NS CP(K) Printed in Japan 1999, 2000 DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 m Ω MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m Ω MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss: Ciss = 760 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±20 A Drain Current (Pulse) Note1 ID(pulse) ±50 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 15 A Single Avalanche Energy Note2 EAS 23 mJ Notes 1. PW ≤ 10 μs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3377 TO-251 (MP-3) 2SK3377-Z TO-252 (MP-3Z) (TO-251) (TO-252) The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. |
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Similar Description - 2SK3377_15 |
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